EXPERTECH ATMOSPHERIC AND LPCVD FURNACE


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 GENERAL INFORMATION | OPERATING INSTRUCTIONS | MANUAL

The Expertech furnace consists of 4 tubes, two of which operate at atmospheric pressure and two for LPCVD processes. Tube 1 (atmospheric) is configured for diffusion growth of SiO2 films utilizing either ‘Thermal’ or ‘Wet’ oxidation (up to 1100C). Tube 2 (atmospheric) is configured for forming gas anneal (up to 800C). LPCVD SiO2 deposition at lower temperatures (up to 800C) is available in Tube 3 and LPCVD Si3N4 (up to 800C) in Tube 4. The LPCVD furnace uses heat to initiate reactions between precursors in the gas phase to growth high quality films on the substrate. The reaction forms at the interface with the substrate when the active species diffuse through the new film which is being grown. No metals are allowed inside the CNI clean room furnace.

For recipes, deposition rate, and film properties information you can view our process development file.

CONTACT INFORMATION
For additional information about the Expertech LPCVD furnace, please contact the clean room staff at cnicleanroom@columbia.edu.