LPCVD EXPERTECH FURNACE


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 GENERAL INFORMATION | OPERATING INSTRUCTIONS | MANUAL

The Low pressure chemical vapor deposition LPCVD furnace consists of 4 tubes for diffusion growth of poly SiC (up to 900C), Si3N4 (up to 800C), Thermal Oxidation (up to 1100C), and forming gas anneal (up to 1100C). Oxide deposition at lower temperatures is also available in the Si3N4 tube. The LPCVD furance uses heat to initiate reactions between precursors in the gas phase to growth high quality films on the substrate. The reaction forms at the interface with the substrate when the active species diffuse through the new film which is being grown. No metals are allowed inside the CNI clean room furnace.

CONTACT INFORMATION
For additional information about the Expertech LPCVD furnace, please contact James Vichiconti at jv2534@columbia.edu or email the clean room staff at cnicleanroom@columbia.edu.