OXFORD PLASMA PRO 100 COBRA Cl RIE
OPERATING INSTRUCTIONS |
Inductively Coupled Plasma (ICP) etching is a technique which uses a radio frequency (RF) energy coupled into a low pressure gas by an inductive coil mounted on the outside of a quartz window. This technique allows fabrication of high aspect ratio silicon features with vertical sidewalls; The Cobra ICP etch sources produce a high density of reactive species at relatively low pressure values. DC bias can be applied to the substrate to increase directionality of ions into the substrate.
The Cl-RIE uses Chlorine based chemistries to etch layers from the III-V groups (e.g. GaAs, AlN, GaN, InP), some ceramic compounds (e.g. Al2O3) and metals (e.g. Pt). Metals are allowed in the Cl-RIE chambers and some F-based etch chemistries are available to use as well. Available gases: BCl3, Cl2, H2, O2, Ar, CF4, and CH4.
For additional information about the Oxford PlasmaPro 100 Cobra Cl RIE, please contact James Vichiconti at firstname.lastname@example.org or email the clean room staff at email@example.com.