CAMBRIDGE NANO TECH INC. SAVANNAH 200

GENERAL INFORMATION | OPERATING INSTRUCTIONS | MAINTENANCE MANUAL
The Atomic Layer Deposition (ALD) process uses typically two chemicals to create alternate, saturated, chemical reactions on the surface, resulting in unique self limiting growth with many excellent features like conformality, uniformity, repeatability and accurate thickness control. These chemicals (precursors) do not exist in gas phase at the same time like in typical CVD processes. Precursors are pulsed sequentially in an inert carrier gas through a heated batch of substrates, with a purge time between the pulses to prevent vapor phase reactions.

Typical growth rate is less than one molecule layer / deposition cycle, however some precursors can provide several molecular layers in a cycle. By supplying enough precursor guarantees uniform film thickness / deposition cycle. Self limiting reactions mean certain specific growth rate for each process conditions.
Currently available materials on this system are Al2O3, HfO2 and TiO2 (NEW!).

For recipes, deposition rate, and film properties information you can view our process development file.

CONTACT INFORMATION
For additional information about the Cambridge Nano Tech Inc. Savannah 200 ALD, please contact Dr. Youry Borisenkov at yb2471@columbia.edu or contact the clean room staff at: cniCR@columbia.edu.