SAMCO PD-220NL PECVD

GENERAL INFORMATION

The SAMCO PD-220NL is a load-lock, parallel-plate Plasma Enhanced Chemical Vapor Deposition (PECVD) system engineered for high uniformity, excellent run-to-run repeatability, and finely tunable thin-film material properties. Designed to support academic and commercial R&D, the system features automated wafer handling, dual-frequency RF biasing, high-temperature substrate heating, and a dedicated liquid precursor delivery line.

• Deposited Films: SiO2, SiNx, SiOxNy, a-Si(amorphous silicon), .

• Stress & Density Control: Dual-frequency plasma power enables precise control over film stress, refractive index, pinhole density, and electrical isolation:

  • High Frequency (HF): 300 W @ 13.56 MHz

  • Low Frequency (LF): 300 W @ 400 kHz

• Thermal Range: Substrate stage heating from ambient up to 450 °C (PID-controlled; standard process optimized at 350 °C), with heated upper showerhead electrode (up to 200 °C) to minimize particle generation.

• Precursor & Gas Delivery:

  • 7 Mass Flow Controlled (MFC) process gas lines: SiH4, N2O, CF4, He, NH3, O2, and N2.

  • Liquid source delivery system for vaporized TEOS (with 700 mL ampule and carrier line) for high-conformality silicon dioxide.

SUBSTRATE HANDLING & GEOMETRY

• Substrate Sizes: Accommodates wafers up to 200 mm (8-inch) diameter, as well as smaller wafer pieces and die.

• Substrate Carrier: 230 mm SiC carrier tray designed for small, irregularly shaped, or flexible substrates.

• Vacuum Load-Lock: Automated single-wafer or tray transfer via an internal wafer-handling robot, maintaining base chamber vacuum and reducing contamination between cycles.

Contact Information
For additional information about the SAMCO PECVD System, please contact the clean room staff at: cniCR@columbia.edu.